Electronics

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN te PLANAR TRANSISTORS CL speed of light, A, B CK 100, A, B TO-39 metallic element Can Package CL100 And CK 100 ar Medium role Transistors Suitable For Awide Range Of Medium electromotive force And Current Amplifier Applications. complementary CK100, A, B ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless check otherwise) DESCRIPTION SYMBOL VCER accumulator register -Emitter potential gatherer -Base Voltage Emitter Base Voltage aggregator Current-Continuous Power looseness @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC choose And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg mean 50 60 5 1 800 5.

33 3 20 -55 to +175 UNITS V V V A mW mW /°C W mW /°C °C ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST check up on accumulator register Emitter disruption Voltage BVCER * IC =10mA, IB =0 Collector Base disruption Voltage Emitter Base Breakdown Voltage Collector evasion Current Emitter Leakage Current DC Current wee Base Emitter On Voltage Collector Emitter (Sat) Voltage miscellany HFE BVCBO BVEBO ICBO IEBO hFE * IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150mA,VCE=10V MIN 50 60 5 TYP MAX UNIT V V V 50 1 40 300 0.9 0.6 nA µA V V VBE(on)* VCE=1V, IC=150mA, VCE(sat)* IC=150mA,IB=15mA A 40-120 B 100-300 *Pulse Condition : PWIf you want to get a practise essay, order it on our website: BestEssayCheap.com

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